US Patent 7785414 Process for manufacturing wafer of silicon carbide single crystal

A process for manufacturing a wafer of a silicon carbide single crystal having: cutting a wafer from an α (hexagonal)-silicon carbide single crystal so that the off-angle is totally in the range from 0.4 to 2° to a plane obtained in perpendicular to the [0001]c axis of the silicon carbide single crystal; disposing the wafer in a reaction vessel; feeding a silicon source gas and carbon source gas in the reaction vessel; and epitaxially growing the α (hexagonal) silicon carbide single crystal on the wafer by allowing the silicon source gas and carbon source gas to react.