US Patent 7785921 Barrier for doped molybdenum targets
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Patent abstract
A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.
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Patent Inventor Names
Daniel R. Juliano0
Deborah Mathias0
Neil M. Mackie0
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US Patent 07785921 Barrier for doped molybdenum targets US Patent 7785921 Barrier for doped molybdenum targets
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Patent Number
077859210
Patent Number
77859210
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Patent Jurisdiction
Patent Number
077859210
Date of Patent
August 31, 2010
0Patent Application Number
123855710
Date Filed
April 13, 2009
0Official Website
Patent Primary Examiner
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US Patent 07785921 Barrier for doped molybdenum targets
Infobox
Is a
Patent jurisdiction
Patent number
07785921
Date of patent
August 31, 2010
Patent application number
12385571
Date Filed
April 13, 2009
Patent primary examiner
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