US Patent 7786487 Semiconductor device and manufacturing method thereof
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Patent abstract
Disclosed is a semiconductor device including a SiC substrate and a heat conductor formed in a hole in the SiC substrate and made of a linear structure of carbon elements.
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Patent Inventor Names
Kazukiyo Joshin0
Masahiro Horibe0
Mizuhisa Nihei0
Yuji Awano0
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Official Website
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US Patent 07786487 Semiconductor device and manufacturing method thereof US Patent 7786487 Semiconductor device and manufacturing method thereof
Infobox
Patent Number
077864870
Patent Number
77864870
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Infobox
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Patent Jurisdiction
Patent Number
077864870
Date of Patent
August 31, 2010
0Patent Application Number
107961460
Date Filed
March 10, 2004
0Official Website
Patent Primary Examiner
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US Patent 07786487 Semiconductor device and manufacturing method thereof
Infobox
Is a
Patent jurisdiction
Patent number
07786487
Date of patent
August 31, 2010
Patent application number
10796146
Date Filed
March 10, 2004
Patent primary examiner
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