Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yi-Sheng Cheng0
Chih-Wei Chao0
Date of Patent
August 31, 2010
Patent Application Number
12019717
Date Filed
January 25, 2008
Patent Citations Received
Patent Primary Examiner
Patent abstract
In this pixel structure, a metal layer/a dielectric layer/a heavily doped silicon layer constitutes a bottom electrode/a capacitor dielectric layer/a top electrode of a storage capacitor. At the same time, a metal shielding layer is formed under the thin film transistor to decrease photo-leakage-current.
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