US Patent 7790359 Plating method

A method of forming an electrode on a semiconductor wafer by plating is disclosed that is able to reliably prevent leakage of a plating solution during the plating process. The plating method comprises the steps of forming a conductive layer on a semiconductor wafer; forming a negative resist layer on the conductive layer; exposing a center portion of the negative resist layer; exposing a peripheral region of the negative resist layer after the step of exposing the center portion of the negative resist layer; developing the exposed negative resist layer to form a predetermined plating pattern; and performing plating on the plating pattern.