Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
September 7, 2010
Patent Application Number
11311985
Date Filed
December 20, 2005
Patent Primary Examiner
Patent abstract
A method for fabricating a semiconductor device is provided. The method includes: forming device isolation layers on a substrate; sequentially forming an anti-reflective coating layer and a photoresist layer on the substrate; patterning the anti-reflective coating layer and the photoresist layer to expose substrate regions in which active regions of a metal oxide semiconductor (MOS) transistor will be formed; and recessing the exposed substrate regions in a predetermined thickness.
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