Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
September 7, 2010
Patent Application Number
11859641
Date Filed
September 21, 2007
Patent Citations Received
0
Patent Primary Examiner
Patent abstract
It is an object of the present invention to provide a technology of controlling a threshold voltage of a thin film transistor in which an amorphous oxide film is applied to a channel layer. There is provided a semiconductor apparatus including a plurality of kinds of transistors, each of the plurality of kinds of transistors including a channel layer made of an amorphous oxide containing a plurality of kinds of metal elements; and threshold voltages of the plurality of kinds of transistors are different from one another by changing an element ratio of the amorphous oxide.
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