Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Takeshi Kamikawa0
Yoshinobu Kawaguchi0
Date of Patent
September 7, 2010
0Patent Application Number
117137600
Date Filed
March 5, 2007
0Patent Primary Examiner
Patent abstract
A nitride semiconductor light emitting device includes a first coat film of aluminum nitride or aluminum oxynitride formed at a light emitting portion and a second coat film of aluminum oxide formed on the first coat film. The thickness of the second coat film is at least 80 nm and at most 1000 nm. Here, the thickness of the first coat film is preferably at least 6 nm and at most 200 nm.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
