Patent attributes
A semiconductor laser having an oscillation wavelength λ (nm) and comprising at least a substrate, a first-conduction-type clad layer having an average refractive index N1cld, an active layer structure having an average refractive index NA, and a second-conduction-type clad layer having an average refractive index N2cld. This has a first-conduction-type subwave guide layer having an average refractive index N1SWG between the substrate and the first-conduction-type clad layer, and has a first-conduction-type low-refractive-index layer having an average refractive index N1LIL between the subwaveguide layer and the substrate. In this, the refractive indexes satisfy specific relational formulae. The semiconductor laser has a stable oscillation wavelength against the change of current/light output/temperature.
