Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Anthony J. Lochtefeld0
Date of Patent
September 21, 2010
0Patent Application Number
118619310
Date Filed
September 26, 2007
0Patent Citations Received
Patent Primary Examiner
Patent abstract
Semiconductor structures include a trench formed proximate a substrate including a first semiconductor material. A crystalline material including a second semiconductor material lattice mismatched to the first semiconductor material is formed in the trench. Process embodiments include removing a portion of the dielectric layer to expose a side portion of the crystalline material and defining a gate thereover. Defects are reduced by using an aspect ratio trapping approach.
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