US Patent 7799637 Scaled dielectric enabled by stack sidewall process

Non-volatile storage elements (or other device) are created. One embodiment includes creating floating gate stacks comprising a floating gate, a control gate and a dielectric between the floating gate and the control gate. One example of a suitable dielectric includes a first layer of oxide, a layer of nitride and a second layer of oxide, all three of which are deposited using Atomic Layer Deposition (or other process). An implant (or other) process is used to create source/drain regions. ALD is used to deposit oxide and nitride for sidewalls.