Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Encarnacion Antonia Garcia Villora0
Noboru Ichinose0
Kiyoshi Shimamura0
Kazuo Aoki0
Date of Patent
September 21, 2010
Patent Application Number
10592533
Date Filed
January 14, 2005
Patent Primary Examiner
Patent abstract
To provide a Ga2O3 compound semiconductor device in which a Ga2O3 system compound is used as a semiconductor, which has an electrode having ohmic characteristics adapted to the Ga2O3 system compound, and which can make a heat treatment for obtaining the ohmic characteristics unnecessary.
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