Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Bunji Mizuno0
Katsumi Okashita0
Hiroyuki Ito0
Yuichiro Sasaki0
Keiichi Nakamoto0
Date of Patent
September 21, 2010
0Patent Application Number
120255040
Date Filed
February 4, 2008
0Patent Primary Examiner
Patent abstract
A semiconductor region having an upper surface and a side surface is formed on a substrate. A first impurity region is formed in an upper portion of the semiconductor region. A second impurity region is formed in a side portion of the semiconductor region. The resistivity of the second impurity region is substantially equal to or smaller than that of the first impurity region.
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