Patent attributes
A semiconductor device includes a substrate of a first conductivity type, a base region of a second conductivity type, a source region of the first conductivity type, a collector region of the second conductivity type, a trench gate, which is formed in a trench via a gate insulation film, an electrically conductive layer, which is formed within a contact trench that is formed through the source region, a source electrode, which is in contact with the electrically conductive layer and the source region, and a latch-up suppression region of the second conductivity type, which is formed within the base region, in contact with the electrically conductive layer, and higher in impurity concentration than the base region. The distance between the gate insulation film and the latch-up suppression region is not less than the maximum width of a depletion layer that is formed in the base layer by the trench gate.
