Patent 7803281 was granted and assigned to Microstaq on September, 2010 by the United States Patent and Trademark Office.
A method for forming a micromachined device is disclosed that includes providing a first silicon layer and a second silicon layer. A coating is provided on a first portion of the first layer. The first layer and the second layer are bonded to each other to form a micromachined device, the coating being effective to prevent the coated first portion of the first layer from bonding to the second layer.