Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yu-Min Jung0
Ki-Hoon Lee0
Date of Patent
September 28, 2010
0Patent Application Number
123010710
Date Filed
May 18, 2007
0Patent Primary Examiner
Patent abstract
Provided is a method of depositing a chalcogenide film for phase-change memory. When the chalcogenide film for phase-change memory is deposited through a method using plasma such as plasma enhanced chemical vapor deposition (PECVD) or plasma enhanced atomic layer deposition (PEALD), a plasma reaction gas including He is used such that the crystallinity of the chalcogenide film is adjusted and the grain size and morphology of the deposited film are adjusted.
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