Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
October 5, 2010
Patent Application Number
12081633
Date Filed
April 18, 2008
Patent Primary Examiner
Patent abstract
The present invention provides a semiconductor memory device having a capacitor electrode of a MOS capacitor formed in polygon and slanting faces enlarged toward an insulating film are provided therearound. A floating gate electrode is provided which extends from over a channel region of a MOSEFT to over corners of ends on the MOSFET side, of the capacitor electrode and which is opposite to the channel region and the capacitor electrode with a gate insulating film interposed therebetween.
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