A dual inductance structure including a substrate, a first inductance element, a second inductance element and a grounding element is provided. The substrate has a layout layer and a grounding layer. The first inductance element has a first and a second conductor. The second inductance element has a third and a fourth conductor. The grounding element has a first and a second grounding portion. The first grounding portion is on the grounding layer and located at an area between the first conductor and the third conductor. At least a part of the second grounding portion is on the grounding layer and located at an area between the first conductor and the second conductor. At least another part of the second grounding portion is on the grounding layer and located at an area between the third conductor and the fourth conductor.