Patent attributes
In a surface emitting semiconductor laser, a first distributed Bragg reflector includes first and second semiconductor layers of a first conductive type. A second distributed Bragg reflector includes first and second portions. An active layer is provided on the first distributed Bragg reflector. The first distributed Bragg reflector, the active layer and the second distributed Bragg reflector are sequentially arranged in the direction of a predetermined axis. A III-V compound semiconductor region is provided on the first distributed Bragg reflector so as to surround the first portion of the second distributed Bragg reflector. A tunnel junction region with a mesa portion and a tunnel junction also is provided. Further, a second conductive type III-V compound semiconductor layer is provided between the active layer and the tunnel junction region.
