Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chih-Jung Wang0
Date of Patent
October 12, 2010
0Patent Application Number
124069380
Date Filed
March 18, 2009
0Patent Primary Examiner
Patent abstract
A manufacturing method of a dual damascene structure is provided. First, a first dielectric layer, a second dielectric layer, and a mask layer are formed. A first trench structure is formed in the mask layer. A via structure is formed in the mask layer, the second dielectric layer, and the first dielectric layer. A portion of the second dielectric layer is then removed, so as to transform the first trench structure into a second trench structure. Here, a bottom of the second trench structure exposes the first dielectric layer.
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