US Patent 7812249 Multijunction photovoltaic cell grown on high-miscut-angle substrate
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Patent abstract
The present invention provides a photovoltaic cell comprising a GaInP subcell comprising a disordered group-III sublattice, a Ga(In)As subcell disposed below the GaInP subcell, and a Ge substrate disposed below the Ga(In)As subcell comprising a surface misoriented from a (100) plane by an angle from about 8 degrees to about 40 degrees toward a nearest (111) plane.
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US Patent 07812249 Multijunction photovoltaic cell grown on high-miscut-angle substrate US Patent 7812249 Multijunction photovoltaic cell grown on high-miscut-angle substrate
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Patent Number
0781224900
Patent Number
781224900
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Patent Jurisdiction
Patent Number
078122490
Date of Patent
October 12, 2010
0Patent Application Number
104139060
Date Filed
April 14, 2003
0Official Website
Patent Primary Examiner
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Patent Jurisdiction
Patent Number
078122490
Date of Patent
October 12, 2010
0Patent Application Number
104139060
Date Filed
April 14, 2003
0Official Website
Patent Primary Examiner
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US Patent 07812249 Multijunction photovoltaic cell grown on high-miscut-angle substrate
Infobox
Is a
Patent jurisdiction
Patent number
07812249
Date of patent
October 12, 2010
Patent application number
10413906
Date Filed
April 14, 2003
Patent primary examiner
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