Patent attributes
A semiconductor device includes a first MOS type capacitor having a first insulating film and a first electrode that are formed on a semiconductor substrate, and a second MOS type capacitor having a second insulating film and a second electrode that are formed on the semiconductor substrate. The first electrode has a first concentration difference as a difference when an impurity concentration in an interface region with the first insulating film is subtracted from an impurity concentration in a top portion of the first electrode. The second electrode has a second concentration difference as a difference when an impurity concentration in an interface region with the second insulating film is subtracted from an impurity concentration in a top portion of the second electrode. The second concentration difference is larger than the first concentration difference.
