US Patent 7812380 Solid-state imaging device and manufacturing method of the same
Patent 7812380 was granted and assigned to Panasonic on October, 2010 by the United States Patent and Trademark Office.
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A solid-state imaging device of the present invention includes: a semiconductor substrate including a first region of a first conductivity type; a signal accumulation region of a second conductivity type formed within the first region; a gate electrode formed above the first region; a drain region of a second conductivity type formed on the first region; an isolation region having insulation properties, which is formed to surround a region where the signal accumulation region, the gate electrode, and the drain region are formed; a first conductivity type dopant doping region formed in contact with a side face and a bottom face of the isolation region, the first conductivity type dopant doping region having a higher dopant concentration than the first region; and a second conductivity type dopant doping region formed in the first region, under an end of the gate electrode in a gate width direction.
US Patent 07812380 Solid-state imaging device and manufacturing method of the same US Patent 7812380 Solid-state imaging device and manufacturing method of the same
US Patent 07812380 Solid-state imaging device and manufacturing method of the same
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