Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
October 12, 2010
Patent Application Number
12107795
Date Filed
April 23, 2008
Patent Primary Examiner
Patent abstract
A method of manufacturing a semiconductor device including a PMOS transistor and a NMOS transistor is described. The method facilitates obtaining a FUSI phase of a suitable composition for the NMOS transistor and the PMOS transistor respectively, with fewer mask layers and through a fewer number of manufacturing steps.
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