Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
October 12, 2010
Patent Application Number
11527532
Date Filed
September 27, 2006
Patent Primary Examiner
Patent abstract
A magnetoresistance effect device has a fixed ferromagnetism layer, a free ferromagnetism layer, and a barrier layer sandwiched by these ferromagnetic layers. It is constituted so that CoFeB whose amount of addition of boron B (b: atomic %) is 21%≦b≦23% may be used for the free ferromagnetism layer. In the magnetic resistance effect element, a magnetostrictive constant does not change steeply near the magnetostrictive constant zero. A MR ratio is maintained to be high.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
