Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Masaaki Noda0
Tomonari Oota0
Date of Patent
October 19, 2010
0Patent Application Number
121050270
Date Filed
April 17, 2008
0Patent Primary Examiner
Patent abstract
The semiconductor device of the present invention has a body layer of a P-type impurity region formed on an N− layer of an N-type impurity region. A plurality of trenches is formed through the body layer from the main surface thereof. A gate insulating film and a gate electrode are formed in each trench. A contact layer of a P-type impurity region and an emitter layer of an N-type impurity region are formed on the main surface of the body layer. A plurality of floating ring layers of P-type impurity regions is formed on the main surface of the N− layer, being spaced apart from the body layer. A well layer of an N-type impurity region is formed between the body layer and N− layer in an area contained in the body layer in plane view.
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