US Patent 7816765 Silicon epitaxial wafer and the production method thereof

A silicon epitaxial wafer obtained by growing a silicon epitaxial layer on a surface of a silicon wafer having a diameter of at least 300 mm produced by slicing a silicon single crystal ingot doped with boron and germanium grown by the Czochralski method, wherein boron is doped to be at a concentration of 8.5×1018 (atoms/cm3) or higher and germanium is doped to satisfy a relational expression (formula 1) below.