Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
October 26, 2010
Patent Application Number
11403566
Date Filed
April 13, 2006
Patent Primary Examiner
Patent abstract
Generally, the process includes depositing a barrier layer on a feature formed in a dielectric layer, decorating the barrier layer with a metal, performing a grafting process, initiating a copper layer and then filing the feature by use of a bulk copper fill process. Copper features formed according to aspects described herein have desirable adhesion properties to a barrier layer formed on a semiconductor substrate and demonstrate enhanced electromigration and stress migration results in the fabricated devices formed on the substrate.
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