Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
October 26, 2010
Patent Application Number
11593470
Date Filed
November 7, 2006
Patent Primary Examiner
Patent abstract
A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
