Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Naoyoshi Tamura0
Date of Patent
October 26, 2010
0Patent Application Number
111685480
Date Filed
June 29, 2005
0Patent Primary Examiner
Patent abstract
The active region of an NMOS transistor and the active region of a PMOS transistor are divided by an STI element isolation structure. The STI element isolation structure is made up of a first element isolation structure formed so as to include the interval between both active regions, and a second element isolation structure formed in the region other than the first element isolation structure.
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