Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
October 26, 2010
Patent Application Number
12477912
Date Filed
June 4, 2009
Patent Primary Examiner
Patent abstract
N-ary three-dimensional mask-programmable read-only memory (N-3DMPROM) stores multi-bit-per-cell. Its memory cells can have N states (N>2) and data are stored as N-ary codes. N-3DMPROM has a larger storage density than the prior-art binary 3D-MPROM. One advantage of N-3DROM over other N-ary memory (e.g. multi-level-cell flash) is that its array efficiency can be kept high. N-3DMPROM could be geometry-defined, junction-defined, or a combination thereof.
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