Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Toshiyuki Hirota0
Date of Patent
November 2, 2010
0Patent Application Number
118829910
Date Filed
August 8, 2007
0Patent Primary Examiner
Patent abstract
A method of producing a semiconductor device according to the present invention comprises steps of:(A) forming trenches (13) on the front surface (FS) of a semiconductor substrate (11) on the back surface (BS) of which a nitride film (12b) is formed;(B) depositing an insulating film (15) to bury the trenches (13);(C) removing the nitride film (12b) on the back surface (BS) of the semiconductor substrate (11) after the step (B); and(D) annealing before the insulating film (15) is etched after the step (C).
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