US Patent 7825434 Nitride semiconductor device
Patent 7825434 was granted and assigned to Panasonic on November, 2010 by the United States Patent and Trademark Office.
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A nitride semiconductor device includes: a first semiconductor layer made of first nitride semiconductor; a second semiconductor layer formed on a principal surface of the first semiconductor layer and made of second nitride semiconductor having a bandgap wider than that of the first nitride semiconductor; a control layer selectively formed on, or above, an upper portion of the second semiconductor layer and made of third nitride semiconductor having a p-type conductivity; source and drain electrodes formed on the second semiconductor layer at respective sides of the control layer; a gate electrode formed on the control layer; and a fourth semiconductor layer formed on a surface of the first semiconductor layer opposite to the principal surface, having a potential barrier in a valence band with respect to the first nitride semiconductor and made of fourth nitride semiconductor containing aluminum.
US Patent 07825434 Nitride semiconductor device US Patent 7825434 Nitride semiconductor device
US Patent 07825434 Nitride semiconductor device
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