Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yoshihiro Mikasa0
Hiroshi Murai0
Masatomi Okanishi0
Date of Patent
November 2, 2010
0Patent Application Number
121929450
Date Filed
August 15, 2008
0Patent Primary Examiner
Patent abstract
A semiconductor device and a method for manufacturing thereof are provided. The semiconductor device includes two epitaxial semiconductor layers formed on a semiconductor substrate, bit lines formed on upper portions of the two epitaxial semiconductor layers, and a charge storage layer formed on the semiconductor substrate between the two epitaxial semiconductor layers.
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