Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Huang Liu0
Johnny Widodo0
Sin Leng Lim0
Date of Patent
November 9, 2010
0Patent Application Number
116150070
Date Filed
December 22, 2006
0Patent Primary Examiner
Patent abstract
A device layer is configured to reduce change in stress characteristics due to subsequent processing to reduce cracking of a subsequently formed layer. The change in stress characteristics can be reduced by providing a shield layer over the device layer to protect the device layer from exposure to subsequently processing, such as curing medium used to form voids in an ultralow-k dielectric layer.
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