US Patent 7829443 Nitride nanowires and method of producing such
Patent 7829443 was granted and assigned to QuNano AB on November, 2010 by the United States Patent and Trademark Office.
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The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.
US Patent 07829443 Nitride nanowires and method of producing such US Patent 7829443 Nitride nanowires and method of producing such
US Patent 07829443 Nitride nanowires and method of producing such
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