Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 9, 2010
Patent Application Number
11269641
Date Filed
November 9, 2005
Patent Citations Received
Patent Primary Examiner
Patent abstract
Provided is a novel method for manufacturing a field effect transistor. Prior to forming an amorphous oxide layer on a substrate, ultraviolet rays are irradiated onto the substrate surface in an ozone atmosphere, plasma is irradiated onto the substrate surface, or the substrate surface is cleaned by a chemical solution containing hydrogen peroxide.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
