Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 9, 2010
Patent Application Number
11898409
Date Filed
September 12, 2007
Patent Primary Examiner
Patent abstract
A semiconductor device fabrication method by which the thermal stability of nickel silicide can be improved. Nickel (or a nickel alloy) is formed over a semiconductor substrate on which a gate region, a source region, and a drain region are formed. Dinickel silicide is formed by performing a first annealing step, followed by a selective etching step. By performing a plasma treatment step, plasma which contains hydrogen ions is generated and the hydrogen ions are implanted in the dinickel silicide or the gate region, the source region, and the drain region under the dinickel silicide. The dinickel silicide is phase-transformed into nickel silicide by performing a second annealing step.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
