US Patent 7829625 Phase-separated dielectric structure fabrication process
Patent 7829625 was granted and assigned to Xerox on November, 2010 by the United States Patent and Trademark Office.
All edits
A process for fabricating an electronic device including: depositing a layer comprising a semiconductor; liquid depositing a dielectric composition comprising a lower-k dielectric material, a higher-k dielectric material, and a liquid, wherein the lower-k dielectric material and the higher-k dielectric material are not phase separated prior to the liquid depositing; and causing phase separation of the lower-k dielectric material and the higher-k dielectric material to form a phase-separated dielectric structure wherein the lower-k dielectric material is in a higher concentration than the higher-k dielectric material in a region of the dielectric structure closest to the layer comprising the semiconductor, wherein the depositing the layer comprising the semiconductor is prior to the liquid depositing the dielectric composition or subsequent to the causing phase separation.
US Patent 07829625 Phase-separated dielectric structure fabrication process US Patent 7829625 Phase-separated dielectric structure fabrication process
US Patent 07829625 Phase-separated dielectric structure fabrication process
Find more entities like US Patent 7829625 Phase-separated dielectric structure fabrication process
