US Patent 7829863 Electron beam irradiation device
Patent 7829863 was granted and assigned to Kyoto University on November, 2010 by the United States Patent and Trademark Office.
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An electron beam irradiation device of the present invention includes: a projector 8 for generating a two-dimensional light pattern 13; a microchannel plate 11 for (i) generating an electron beam array based on the light pattern 13 having entered, (ii) amplifying the electron beam array, and (iii) emitting the electron beam array as an amplified electron beam array 14; and an electron beam lens section 12 for converging the amplified electron beam array 14. This electron beam irradiation device is capable of manufacturing a semiconductor device whose performance is improved through a finer processing by means of irradiation using an electron beam. Further, the electron beam irradiation device allows cost reduction, because the device allows collective irradiation using a two dimensional pattern.
US Patent 07829863 Electron beam irradiation device US Patent 7829863 Electron beam irradiation device
US Patent 07829863 Electron beam irradiation device
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