Patent attributes
There is provided a group III nitride crystal growth method capable of obtaining a material which is a GaN substrate of low defect density capable of being used as a power semiconductor substrate and in which characteristics of n-type and p-type requested for formation of transistor or the like. A growth method of group III nitride crystals includes: forming a mixed melt containing at least group III element and a flux formed of at least one selected from the group consisting of-alkaline metal and alkaline earth metal, in a reaction vessel; and growing group III nitride crystals from the mixed melt and a substance containing at least nitrogen, wherein after immersing a plurality of seed crystal substrates placed in an upper part of the reaction vessel in which the mixed melt is formed, into the mixed melt to cause crystal growth, the plurality of seed crystal substrates are pulled up above the mixed melt.
