Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
November 16, 2010
Patent Application Number
11552503
Date Filed
October 24, 2006
Patent Primary Examiner
Patent abstract
The present invention provides a method of making a Cu—In—Ga sputtering target by melting Cu, In and Ga, Cu and In or Cu and Ga to form a uniform melt with a pre-determined stoichiometry, which melt is sprayed to cause sprayed uniform melt particles to solidify into Cu—In—Ga particles with the pre-determined stoichiometry. The sputtering target is then made using the Cu—In—Ga particles. In a further aspect of the invention, there is provided a method of producing a thin film absorber layer for solar cell fabrication by sputter depositing a precursor film with a first composition
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