Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 16, 2010
Patent Application Number
11763566
Date Filed
June 15, 2007
Patent Citations Received
Patent Primary Examiner
Patent abstract
Provided is a semiconductor device including a substrate. A gate formed on the substrate. The gate includes a sidewall. A spacer formed on the substrate and adjacent the sidewall of the gate. The spacer has a substantially triangular geometry. A contact etch stop layer (CESL) is formed on the first gate and the first spacer. The thickness of the CESL to the width of the first spacer is between approximately 0.625 and 16.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
