Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 16, 2010
Patent Application Number
12379917
Date Filed
March 4, 2009
Patent Primary Examiner
Patent abstract
A semiconductor device is provided including a first fuse link having a copper-containing metal film, a second fuse link having a polysilicon film, a semiconductor substrate, and a field insulating film formed on the semiconductor substrate. The second fuse link is formed on the field insulating film. An interlayer insulating film is provided between the first fuse link and the second fuse link. The first fuse link is electrically connected to the second fuse link via a first plug formed in the interlayer insulating film.
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