Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 16, 2010
Patent Application Number
12198152
Date Filed
August 26, 2008
Patent Primary Examiner
Patent abstract
A semiconductor laser comprises: a ridge structure including a p-type cladding layer, an active layer, and an n-type cladding layer stacked on one another; and a burying layer burying sides of the ridge structure. The burying layer includes a p-type semiconductor layer and an n-type semiconductor layer that form a pn junction; and one of the p-type semiconductor layer and the n-type semiconductor layer has a carrier concentration of 5×1017 cm−3 or less near the pn junction.
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