US Patent 7838328 Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device having flexibility by separating an element that is manufactured by a comparatively low-temperature (temperature of less than 500° C.) process from a substrate is provided. The element is separated from a glass substrate by the following steps: forming a silicone layer over a glass substrate; performing plasma treatment to the surface of the silicone layer to weaken the surface of the silicone layer; stacking an organic compound layer over the silicone layer; and forming an element that is manufactured through a process at a comparatively low-temperature, typically, a temperature that the organic compound can withstand, over the compound layer.