Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 23, 2010
Patent Application Number
11632738
Date Filed
July 12, 2005
Patent Primary Examiner
Patent abstract
A transistor device is formed of a continuous linear nanostructure having a source region, a drain region and a channel region between the source and drain regions. The source (20) and drain (26) regions are formed of nanowire ania the channel region (24) is in the form of a nanotube. An insulated gate (32) is provided adjacent to the channel region (24) for controlling conduction i ni the channel region between the source and drain regions.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
