Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hiroyuki Oguri0
Date of Patent
November 23, 2010
0Patent Application Number
116544970
Date Filed
January 18, 2007
0Patent Primary Examiner
Patent abstract
A fabrication method of a semiconductor device includes forming a silicon nitride layer on a compound semiconductor layer with a plasma CVD method and selectively treating the compound semiconductor layer with use of the silicon nitride layer for a mask. The silicon nitride layer has a refraction index of less than 1.85. The compound semiconductor layer includes Ga.
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