US Patent 7838909 Semiconductor device with trench structure
Patent 7838909 was granted and assigned to Denso on November, 2010 by the United States Patent and Trademark Office.
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Patent abstract
A semiconductor device includes a common diffusion structure formed in each region of a substrate in which semiconductor components are formed. The diffusion structures are separated into sections by trenches to form semiconductor components. The trenches define sizes of the semiconductor components and isolate the semiconductor components from the surrounding area.
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US Patent 07838909 Semiconductor device with trench structure US Patent 7838909 Semiconductor device with trench structure
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Patent Number
0783890900
Patent Number
783890900
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
078389090
Date of Patent
November 23, 2010
0Patent Application Number
115286120
Date Filed
September 28, 2006
0Official Website
Patent Primary Examiner
Edits on 27 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
078389090
Date of Patent
November 23, 2010
0Patent Application Number
115286120
Date Filed
September 28, 2006
0Official Website
Patent Primary Examiner
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US Patent 07838909 Semiconductor device with trench structure
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07838909
Date of patent
November 23, 2010
Patent application number
11528612
Date Filed
September 28, 2006
Patent primary examiner
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