Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Takeo Kawase0
Soichi Moriya0
Date of Patent
November 23, 2010
0Patent Application Number
115657140
Date Filed
December 1, 2006
0Patent Primary Examiner
Patent abstract
A thin-film transistor includes a gate electrode, a source electrode, a drain electrode, a semiconductor layer, and a gate insulating layer for insulating the source electrode and the drain electrode from the gate electrode, wherein the gate insulating layer includes composite particles in which a hydrophobic compound is provided on the surfaces of insulating inorganic particles.
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